ANALYSIS OF MISORIENTED CRYSTAL-STRUCTURE BY ION CHANNELING OBSERVED USING ION-INDUCED SECONDARY ELECTRONS

Channeling measurements using secondary electrons induced by MeV ions such as 2 MeV H+ and 3.5 MeV/u O8+ were carried out to investigate the lattice disorder in Ni and epitaxially grown CeO2 crystals, which was hardly detected by backscattering spectroscopy with MeV ions. The keV electron yield under channeling incidence conditions sensitively refl ects the degree of misorientation of atomic rows with a mean deviation angle on the order of 0.1 degrees. The measurements for a small criti cal angle for channeling is extremely useful for analysis of a ten-nan ometer-thick surface layer containing a strained lattice.