CARBON CONTAMINATION LEVELS IN PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED FLUORINATED SILICA GLASSES

Authors
SWOPE R YOO WS
Citation
R. Swope et Ws. Yoo, CARBON CONTAMINATION LEVELS IN PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED FLUORINATED SILICA GLASSES, JPN J A P 1, 35(11), 1996, pp. 5843-5844
Citations number
4
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
35
Issue
11
Year of publication
1996
Pages
5843 - 5844
Database
ISI
SICI code
Abstract
In this study, the carbon levels in fluorinated silica glass (FSG) fil ms were investigated. FSG films were deposited using a dual-frequency sequential-deposition plasma-enhanced chemical vapor deposition (PECVD ) reactor using TEOS, O-2 and C2F6 as source reagents. It was found th at FSG films have substantially lower carbon levels than undoped PECVD TEOS-based silicon dioxide films. Carbon content was also found to be dependent on the fluorine content in the films.