GROWTH AND PATTERNING OF AMORPHOUS FESIBC FILMS

We report the growth of amorphous FeSiBC films on a range of substrate s including oriented semiconductor, polycrystalline metal, and polyimi de. The films vary in thickness from 2.6 mu m down to 20 nm and were c haracterised by the Magneto-Optic Kerr Effect (MOKE), and for the thic ker film a combination of MOKE and a high resolution inductive magneto meter. These measurements imply a skin-depth of 30 nm, at the frequenc y of the MOKE laser. A representative amorphous FeSiBC film of thickne ss 0.3 mu m was patterned into wires of nominal width 10 mu m, separat ion 5 mu m, and length 10 mm by conventional microelectronic fabricati on techniques. The switching of the wire-array was investigated by MOK E.