ELECTRON-BEAM-INDUCED CRYSTALLIZATION OF A GE-AU AMORPHOUS FILM

Authors
Citation
L. Ba et al., ELECTRON-BEAM-INDUCED CRYSTALLIZATION OF A GE-AU AMORPHOUS FILM, Journal of applied physics, 80(11), 1996, pp. 6170-6174
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
80
Issue
11
Year of publication
1996
Pages
6170 - 6174
Database
ISI
SICI code
0021-8979(1996)80:11<6170:ECOAGA>2.0.ZU;2-I
Abstract
An amorphous Ge-Au(a-Ge-Au) film prepared by vacuum deposition was stu died in situ and irradiated by an electron beam in a transmission elec tron microscope. The amorphous Ge-Au film can be crystallized rapidly and locally by electron beam irradiation, forming polycrystalline meta stable Ge0.4Au0.6 tetragonal phase and then decomposing to polycrystal line Ge and polycrystalline Au at increased irradiation dose. The resu lts suggest that the crystallization of a-GeAu film, the formation of Ge0.4Au0.6 and the decomposition of the metastable Ge0.4Au0.6 are depe ndent on the temperature rise of the irradiation process. (C) 1996 Ame rican Institute of Physics.