R. Venkatasubramanian et al., A STOCHASTIC-MODEL FOR CRYSTAL-AMORPHOUS TRANSITION IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL SI(111), Journal of applied physics, 80(11), 1996, pp. 6219-6222
Molecular beam epitaxial Si (111) grown below a certain temperature re
sult in amorphous structure due to the limited surface mobility of ato
ms in finding correct epitaxial sites. In spite of many experimental a
nd theoretical studies, the mechanism of crystal-amorphous transition
and its dynamics related to the growth conditions are not well underst
ood. In this article, we present a theoretical model based on the form
ation of stacking fault like defects as a precursor to the amorphous t
ransition of the layer. The model is simulated based on a stochastic m
odel approach and the results are compared to that of experiments for
temperatures in the range of 500-900 K and growth rate in the range of
0.1-3.0 Angstrom/s. The agreement between our results and experimenta
l observations is excellent. (C) 1996 American Institute of Physics.