STUDY OF INXGA1-XAS INASYP1-Y STRUCTURES LATTICE-MISMATCHED TO INP SUBSTRATES/

Material properties of several lattice-mismatched InxGa1-xAs/InAsyP1-y (0.66<x<0.84, 0.29<y<0.66) alloys grown on InP substrates are investi gated. The lattice constants and compositions were measured using x-ra y diffraction and electron probe microanalysis. Photoluminescence, whi te light transmission, and detector cutoff wavelengths were used to de termine the band gap of InxGa1-xAs as a function of In concentration x . The three methods agree to within 3%. The quality of the grown layer s was also investigated using these techniques, in addition to cross-s ection transmission electron microscopy and Nomarsky optical microscop y. The dependence of the experimental measurements of band gap and lat tice constant on material composition, measured by electron probe micr oanalysis, was compared against theoretical values. (C) 1996 American Institute of Physics.