A SIMPLE TECHNIQUE FOR THE SEPARATION OF BULK AND SURFACE RECOMBINATION PARAMETERS IN SILICON

A simple method for the separation of bulk and surface recombination p arameters, based on the simultaneous control of time and amplitude cha racteristics of carrier concentration decay, is presented. To enhance the precision of the parameter extraction procedure, the amplitude is determined using a wavelength resulting in near surface carrier excita tion while the effective lifetime is measured for homogeneous bulk exc itation. For the fast interpretation of experimental data, a technique using nomographs of amplitude-decay time correlated dependencies on m odulation depth is proposed. (C) 1996 American Institute of Physics.