Gs. Nolas et al., LOW-TEMPERATURE TRANSPORT-PROPERTIES OF THE MIXED-VALENCE SEMICONDUCTOR RU0.5PD0.5SB3, Journal of applied physics, 80(11), 1996, pp. 6304-6308
We have measured the transport properties of Ru0.5Pd0.5Sb3 from 300 do
wn to 4 K and compared them to those of the binary-skutterudite antimo
nides. In particular, the lattice thermal conductivity of this compoun
d is substantially lower than that of CoSb3 and IrSb3. This is attribu
ted to the mixed-valency of ruthenium in this compound. Using near-edg
e extended absorption fine structure analysis, it is observed that rut
henium in this compound is in the RU(4+)- and Ru2+-valence states in a
pproximately equal proportions. The potential for thermoelectric appli
cations of this material is also discussed. (C) 1996 American Institut
e of Physics.