LOW-TEMPERATURE TRANSPORT-PROPERTIES OF THE MIXED-VALENCE SEMICONDUCTOR RU0.5PD0.5SB3

Citation
Gs. Nolas et al., LOW-TEMPERATURE TRANSPORT-PROPERTIES OF THE MIXED-VALENCE SEMICONDUCTOR RU0.5PD0.5SB3, Journal of applied physics, 80(11), 1996, pp. 6304-6308
Citations number
39
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
80
Issue
11
Year of publication
1996
Pages
6304 - 6308
Database
ISI
SICI code
0021-8979(1996)80:11<6304:LTOTMS>2.0.ZU;2-6
Abstract
We have measured the transport properties of Ru0.5Pd0.5Sb3 from 300 do wn to 4 K and compared them to those of the binary-skutterudite antimo nides. In particular, the lattice thermal conductivity of this compoun d is substantially lower than that of CoSb3 and IrSb3. This is attribu ted to the mixed-valency of ruthenium in this compound. Using near-edg e extended absorption fine structure analysis, it is observed that rut henium in this compound is in the RU(4+)- and Ru2+-valence states in a pproximately equal proportions. The potential for thermoelectric appli cations of this material is also discussed. (C) 1996 American Institut e of Physics.