LEAKAGE CURRENT ANALYSIS FOR INYGA1-YPZAS1-Z ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS/

A band offset diagram for the heterojunction InyGa1-yPzAs1-z/AlxGa1-xA s based on the transitivity rule and our measured band offset for In0. 5Ga0.5P/GaAs is given. A carrier leakage analysis is developed and exp lains the experimental observations in 670 nm visible InyGa1-yPzAs1-z/ AlxGa1-xAs double heterostructure (DH) lasers. The analysis based on t he performance of this laser verifies that our band offset is more acc urate than previous values. In contrast to GaAs/AlxGa1-xAs, InGaPAs/In P and InGaP/AlGaInP DH lasers, we found that the leakage of holes, rat her than of electrons, is responsible for the high threshold current d ensity of this type of laser. (C) 1996 American Institute of Physics.