EFFECT OF IMPLANTED ION SPECIES ON THE DECAY KINETICS OF 2.7 EV PHOTOLUMINESCENCE IN THERMAL SIO2-FILMS

Decay kinetics of photoluminescence (PL) existing around 2.7 eV has be en studied in various ion-implanted thermal SiO2 films as a function o f implantation conditions. The PL observed in many samples shows decay constants shorter than 10 ms, which is a well-observed decay constant for silica glass. The change in the decay constant and that in the PL intensity have been found to be systematically related with the mass and the dose of the implanted ions. Therefore, despite the shea decay constant, the present 2.7 eV PL is attributable to a tripler-to-single t transition of oxygen deficient centers, as in the case of silica gla ss. The rapid decay is interpreted as the increase in spin-orbit coupl ing interaction due to structural deformations by ion implantation suc h as the formation of paramagnetic defects and/or densification. (C) 1 996 American Institute of Physics.