LOW PHOTOCURRENT GAAS-AL0.3GA0.7AS MULTIPLE-QUANTUM-WELL MODULATORS WITH SELECTIVE ERBIUM DOPING

Authors
YUAN Y ZHANG X BHATTACHARYA P
Citation
Y. Yuan et al., LOW PHOTOCURRENT GAAS-AL0.3GA0.7AS MULTIPLE-QUANTUM-WELL MODULATORS WITH SELECTIVE ERBIUM DOPING, IEEE photonics technology letters, 8(12), 1996, pp. 1638-1640
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
8
Issue
12
Year of publication
1996
Pages
1638 - 1640
Database
ISI
SICI code
1041-1135(1996)8:12<1638:LPGMMW>2.0.ZU;2-F
Abstract
A new scheme of reducing the photocurrent of a quantum-confined Stark effect multiple-quantum-well modulator is demonstrated, The GaAs web r egions of the 50-period GaAs-Al0.3Ga0.7As multiple-quantum-well are se lectively doped with Er during molecular beam epitaxy to reduce the ca rrier lifetime to the order of picoseconds. 250-mu m diameter mesa-sha ped devices have been characterized The photocurrent responsivity is a s low as 0.005 A/W and an extinction ratio greater than 1:8 is achieve d at a bias voltage of 8 V.