ADVANCES IN ION IMPLANTER PRODUCTIVITY AND SAFETY

Authors
ROMIG T MCMANUS J OLANDER K KIRK R
Citation
T. Romig et al., ADVANCES IN ION IMPLANTER PRODUCTIVITY AND SAFETY, Solid state technology, 39(12), 1996, pp. 69
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid state technology → ACNP
ISSN journal
0038111X
Volume
39
Issue
12
Year of publication
1996
Database
ISI
SICI code
0038-111X(1996)39:12<69:AIIIPA>2.0.ZU;2-V
Abstract
This article examines the impact of advanced dopant delivery systems o n ion implanter productivity and safety. Conventional dopant source ma terials are compared with a new atmospheric pressure SDS Gas source. T he source reversibly adsorbs the dopant gas onto high-surface-area mat erials and uses pressure swing desorption to deliver the dopant to the implanter ion source.