ELECTRICAL-RESISTANCE OF NBSE3-SINGLE CRYSTALS UNDER UNIAXIAL PRESSURE

Authors
CHASHKA KB BELETSKII VI OBOLENSKII MA
Citation
Kb. Chashka et al., ELECTRICAL-RESISTANCE OF NBSE3-SINGLE CRYSTALS UNDER UNIAXIAL PRESSURE, Physica. B, Condensed matter, 203(1-2), 1994, pp. 75-80
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
203
Issue
1-2
Year of publication
1994
Pages
75 - 80
Database
ISI
SICI code
0921-4526(1994)203:1-2<75:EONCUU>2.0.ZU;2-7
Abstract
The influence of uniaxial pressure along the a-axis on the resistivity along the b-axis of NbSe3 single crystals was investigated. The press ure increases the CDW-transition temperature to near 59 K and suppress es both Peierls gaps. The increase of the pressure leads to enhancemen t of the superconducting transition. The resistance behaviour of NbSe3 -NbSe3 junctions at low pressure reconciles with the Anderson localiza tion mechanism of conductivity.