MICRORAMAN ANALYSIS OF TWIN LAMELLAE IN UNDOPED LEC INP

Citation
P. Martin et al., MICRORAMAN ANALYSIS OF TWIN LAMELLAE IN UNDOPED LEC INP, Journal of materials science. Materials in electronics, 5(6), 1994, pp. 315-320
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
09574522
Volume
5
Issue
6
Year of publication
1994
Pages
315 - 320
Database
ISI
SICI code
0957-4522(1994)5:6<315:MAOTLI>2.0.ZU;2-2
Abstract
A {221} twin lamella in undoped LEC InP was studied by means of a dilu ted sirtl mixture applied with fight (DSL) photoetching and microRaman spectroscopy. This study revealed that there was defect segregation a t the twin boundary. This boundary-defect-depletion area would result in an enhanced photocarrier lifetime and a stress relaxation that exte nds a few micrometres away the boundary. From these results, it appear s that the formation of this twin was strongly influenced by stoichiom etry fluctuations during growth; these fluctuations were revealed by b oth selective photoetching and by microRaman scanning spectroscopy.