INDIVIDUAL INTERFACE TRAPS AT THE SI-SIO2 INTERFACE

In submicrometre-sized metal-oxide-semiconductor field-effect transist ors, MOSFETs, the alternate capture and emission of carriers at indivi dual Si-SiO2 interface defects generates discrete switching in the sou rce-drain resistance. The resistance changes are observed in the drain current as random telegraph signals (RTSs) or as stepped transients a fter a strong perturbation of the trap occupation. The study of indivi dual defects in MOSFETs has provided a powerful means of investigating the capture and emission kinetics of interface traps, it has demonstr ated the defect origins of low-frequency (1/f) noise in MOSFETs, and i t has provided new insight into the nature of defects at the Si-SiO2 i nterface. The analysis of individual interface defects has shown that a Coulomb energy of several hundred millivolts is involved in the tran sfer and localization of the single charge carrier into the interface trap.