J. Malzbender et al., INTERACTION BETWEEN IODINE AND CDTE IN CLOSED TUBE DIFFUSIONS, Journal of materials science. Materials in electronics, 5(6), 1994, pp. 352-355
The compatibility of iodine and CdTe is discussed and methods by which
CdTe can be doped with iodine from the vapour phase using closed tube
diffusion techniques are described. At elevated temperatures (greater
than or equal to 100 degrees C) an elemental iodine diffusion source
was found to be unsuitable since it caused severe degradation of the C
dTe surface, even when elemental Cd was added to the diffusion source.
To overcome this difficulty the compound Cdl(2) was produced and used
successfully at temperatures up to 600 degrees C.