INTERACTION BETWEEN IODINE AND CDTE IN CLOSED TUBE DIFFUSIONS

Citation
J. Malzbender et al., INTERACTION BETWEEN IODINE AND CDTE IN CLOSED TUBE DIFFUSIONS, Journal of materials science. Materials in electronics, 5(6), 1994, pp. 352-355
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
09574522
Volume
5
Issue
6
Year of publication
1994
Pages
352 - 355
Database
ISI
SICI code
0957-4522(1994)5:6<352:IBIACI>2.0.ZU;2-T
Abstract
The compatibility of iodine and CdTe is discussed and methods by which CdTe can be doped with iodine from the vapour phase using closed tube diffusion techniques are described. At elevated temperatures (greater than or equal to 100 degrees C) an elemental iodine diffusion source was found to be unsuitable since it caused severe degradation of the C dTe surface, even when elemental Cd was added to the diffusion source. To overcome this difficulty the compound Cdl(2) was produced and used successfully at temperatures up to 600 degrees C.