EFFECTS OF INTERACTION IN YBACUO GAAS STRUCTURES WITH CHEMICAL ACTIVESILICIDE BUFFER LAYER

Superconducting YBaCuO thin films on GaAs substrate have been reproduc ibly prepared by the high-pressure RF magnetron sputtering without fut her anneling. A buffer silicide layer to prevent the degradation of Ga As during YBaCuO film deposition. Superconducting YBaCuO thin films wi th a highly c-axis orientation perpendicular to the substrate surface, zero-resistance temperature of 83 - 85 K, and critical current densit y of 5.10 A/cm(2) at 77 K have been achieved in our experiments. In th ese structures the interdiffusion between YBaCuO films and GaAs substr ate is limited.