LARGE-AREA PULSED-LASER DEPOSITION OF YBCO THIN-FILMS ON 3-INCH WAFERS

An arrangement for large area PLD on 3-inch wafers is proposed. For in -situ deposited YBCO thin films on r-plane sapphire with YSZ buffer la yer we inductively measured within 3 inch diameter values of the criti cal temperature T-c(90%) from 85.9 K to 86.7 K and values of the criti cal current density j(c)(77 K) from 1 x 10(6) to 2 x 10(6) A/cm(2). La rge area PLD seems to be a very promising technique for homogeneous co ating of 3-inch wafers by epitaxial oxide thin films.