SELECTIVE EPITAXIAL-GROWTH OF SUBMICRON STRUCTURES OF YBACUO BY SUBSTRATE MODIFICATION

Sub-micron structures of high-Tc thin films have been realized with Se lective Epitaxial Growth (SEG). Two different techniques to achieve SE G have been studied. First, narrow trenches down to 100 nm are etched into the substrate with a four-layer E-beam lithography technique. Sec ond, amorphous metal layers have been used to define pattern definitio n masks. Besides the suitability of both techniques, also the potentia l to combine these techniques is part of this study.