METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF RED AND INFRARED VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES

Metalorganic vapour phase epitaxy (MOVPE) is used For the growth of ve rtical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly used molecular b eam epitaxial (MBE) techniques, including ease of continuous compositi onal and dopant grading for low-resistance p-type distributed Bragg re flectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials, especially with phosphorus, and do pants. Top-emitting InGaAs/AlGaAs/AlAs 950 nm VCSELs exhibit the highe st power conversion (wallplug) efficiencies (21%), lowest threshold vo ltage (1.47 V), and highest single mode power (4.4 mW from an 8 mu m d evice) yet reported. GaAs/AlGaAs/AlAs VCSELs lasing near 850 nm have d emonstrated record low threshold voltage (1.7 V) at this wavelength, a nd excellent uniformity in wavelength (+/- 1%) across a 3-inch wafer, and in threshold voltage (+/- 1.5%), threshold current (+/- 10%) and o utput power (+/- 20%) across a 34-element array. 650 nm VCSELs based o n AlGaInP/AlGaAs heterostructures have been demonstrated by MOVPE only , and lase continuous wave at room temperature, with voltage threshold s between 2.5 and 3 V and maximum power outputs of over 0.3 mW. These results establish MOVPE as a proven growth technique for this importan t new family of photonic devices.