O. Schoenfeld et al., OPTICAL, ELECTRICAL AND STRUCTURAL INVESTIGATIONS OF THE TRANSITION FROM AMORPHOUS TO MICROCRYSTALLINE SILICON, JPN J A P 1, 33(11), 1994, pp. 6082-6085
Optical and electrical properties were correlated with structural inve
stigations during the amorphous-to-microcrystalline phase transition o
f magnetron-sputtered silicon thin films. The optical characterization
was carried out using the Tauc formalism, and the electrical transpor
t phenomena were studied by means of thermal activated conductivity me
asurements. The absorption measurements show a sharp increase of the g
rain boundary states corresponding to a bent Tauc plot during the crys
tallization. This increase of grain boundary states leads to a drastic
drop of the activation energy of the conductivity to zero. A new mode
l of combined grain boundary states is introduced to explain the elect
ric and optical behavior in such new microcrystalline materials.