OPTICAL, ELECTRICAL AND STRUCTURAL INVESTIGATIONS OF THE TRANSITION FROM AMORPHOUS TO MICROCRYSTALLINE SILICON

Citation
O. Schoenfeld et al., OPTICAL, ELECTRICAL AND STRUCTURAL INVESTIGATIONS OF THE TRANSITION FROM AMORPHOUS TO MICROCRYSTALLINE SILICON, JPN J A P 1, 33(11), 1994, pp. 6082-6085
Citations number
13
Categorie Soggetti
Physics, Applied
Volume
33
Issue
11
Year of publication
1994
Pages
6082 - 6085
Database
ISI
SICI code
Abstract
Optical and electrical properties were correlated with structural inve stigations during the amorphous-to-microcrystalline phase transition o f magnetron-sputtered silicon thin films. The optical characterization was carried out using the Tauc formalism, and the electrical transpor t phenomena were studied by means of thermal activated conductivity me asurements. The absorption measurements show a sharp increase of the g rain boundary states corresponding to a bent Tauc plot during the crys tallization. This increase of grain boundary states leads to a drastic drop of the activation energy of the conductivity to zero. A new mode l of combined grain boundary states is introduced to explain the elect ric and optical behavior in such new microcrystalline materials.