INPLANE ALIGNED Y1BA2CU3O7-X TAPES ON METALLIC SUBSTRATE BY CHEMICAL-VAPOR-DEPOSITION TECHNIQUE

In-plane aligned Y1Ba2Cu3O7-x thin-film tapes have been prepared by th e chemical vapor deposition technique on a metallic substrate at 700 d egrees C. For continuous deposition on a long substrate, tetrahydrofur an solution of Y, Ba and Cu beta-diketonate chelate was slowly introdu ced to a vaporizer with argon gas by a liquid flow controller. The gen erated gas, including source metals, was carried to a reactor with oxy gen. The orientation-controlled Y1Ba2Cu3O7-x thin-film tapes could be obtained by this system on a Hastelloy C-276 substrate with an in-plan e aligned yttrium-stabilized zirconia buffer layer. The critical tempe rature defined by zero resistance was 88.5 K and the critical current density at 77 K in 0 T was 2.74 x 10(4) A/cm(2).