HYBRID-TYPE INGAALP GAAS DISTRIBUTED BRAGG REFLECTORS FOR INGAALP LIGHT-EMITTING-DIODES/

Hybrid-type distributed Bragg reflectors (DBRs) with InAlP/GaAs and In AlP/InGaAlP multilayers grown by metalorganic chemical vapor depositio n (MOCVD) have been investigated. The structure of the DBRs was design ed using a theoretical calculations considering the absorption loss an d refractive index of each stacked layer. The wide-band, high-reflecti vity characteristics were also experimentally confirmed. Good electric al conductivity through InGaAlP light-emitting diodes (LEDs) with the hybrid-type DBRs was obtained in spite of the many interface needed fo r the multiple layers of the DBRs. A luminous intensity of 0.8 ed was obtained at 565.7 nm (nearly pure green light).