Theoretical analysis of chemically amplified resists indicates that a
higher reaction order of acid-catalyzed reaction and lower diffusion l
ength of acid enhance image quality. We identified the relation betwee
n diffusion length and the number of catalytic acids appropriate for i
nducing a given amount of acid-catalyzed reactions as a function of th
e difference between the activation energies of diffusion (E(ad)) and
acid-catalyzed reaction (E(ar)), and the postexposure baking (FEB) tem
perature. When E(ad)=E(ar), the diffusion length required for a certai
n amount of acid-catalyzed reaction is inversely proportional to the s
quare root of the amount of generated acids, regardless of FEB tempera
ture. When E(ad) not equal E(ar), the required diffusion length depend
s on FEB temperature. When E(ad)<E(ar), the diffusion length is smalle
r at higher FEB temperatures, and this will be preferable for enhancin
g the resist resolution.