CHEMICAL PRESSURE EFFECTS ON THE OPTIMIZATION OF T-C IN T' ELECTRON-DOPED SUPERCONDUCTING CUPRATES

Citation
M. Suaaidi et al., CHEMICAL PRESSURE EFFECTS ON THE OPTIMIZATION OF T-C IN T' ELECTRON-DOPED SUPERCONDUCTING CUPRATES, Physica. C, Superconductivity, 235, 1994, pp. 789-790
Citations number
6
Categorie Soggetti
Physics, Applied
ISSN journal
09214534
Volume
235
Year of publication
1994
Part
2
Pages
789 - 790
Database
ISI
SICI code
0921-4534(1994)235:<789:CPEOTO>2.0.ZU;2-L
Abstract
We report a systematic variation of the superconducting properties wit h the Ln(3+) size and x in (Ln)(2-x)CexCuO4-delta T' compounds. Progre ssive higher T-C's with increasing interatomic Cu-O distances are foun d at the rate dT(CO)(d(Cu-O))approximate to 240 K Angstrom(-1) in x-op timized samples, having the same density of carriers in CuO2 layers. C harge transfer mechanisms have been isolated from all the rest modifyi ng T-C under pressure. The first can positively contribute to T-C in o verdoped samples, while the second are estimated to yield dT(CO)/dP ap proximate to-0.11 K/Kbar.