SINGLE-CRYSTAL GROWTH OF HGBACACUO AND INFINITE-LAYER CACUO2 AT HIGH GAS-PRESSURE

Authors
KARPINSKI J MANGELSCHOTS I SCHWER H CONDER K MORAWSKI A LADA T PASZEWIN A
Citation
J. Karpinski et al., SINGLE-CRYSTAL GROWTH OF HGBACACUO AND INFINITE-LAYER CACUO2 AT HIGH GAS-PRESSURE, Physica. C, Superconductivity, 235, 1994, pp. 917-918
Citations number
3
Categorie Soggetti
Physics, Applied
Journal title
Physica. C, Superconductivity → ACNP
ISSN journal
09214534
Volume
235
Year of publication
1994
Part
2
Pages
917 - 918
Database
ISI
SICI code
0921-4534(1994)235:<917:SGOHAI>2.0.ZU;2-R
Abstract
Single crystals of the HgBa2Can-1CunO2n+2+delta compounds have been gr own using a high gas pressure. The Hg1234 single crystals have a T-c o f 129 K. X-ray and TEM investigations proved the high quality of the c rystal structure. Single crystals of the CaCuO2 infinite layer compoun d of a size up to several mm(2) have been obtained under a high gas pr essure without stabilizing additives of Sr or Li. The T-c of the as gr own crystals is 70-80 K