THERMOELECTRIC-POWER OF THE SINGLE-LAYER COMPOUND BI2.1SR1.9CUO6+DELTA

Citation
Psipn. Desilva et al., THERMOELECTRIC-POWER OF THE SINGLE-LAYER COMPOUND BI2.1SR1.9CUO6+DELTA, Physica. C, Superconductivity, 235, 1994, pp. 1531-1532
Citations number
4
Categorie Soggetti
Physics, Applied
ISSN journal
09214534
Volume
235
Year of publication
1994
Part
2
Pages
1531 - 1532
Database
ISI
SICI code
0921-4534(1994)235:<1531:TOTSCB>2.0.ZU;2-C
Abstract
The resistivity and thermoelectric power (TEP) of Bi2.1Sr1.9CuO6+delta (Bi-2201) has been measured as a function of oxygen deficiency. The tr ansition temperature of the non-superconducting, as prepared sample ca n be increased by nitrogen anneals and was raised to a maximum of T-c= 15.5K for the midpoint of the resistive transition. The effect on the TEP of lanthanum and lead doping which increases T-c to 32K has also b een studied, and comparison made with the universal curve [1] of T-c a gainst room temperature thermopower S(290K).