QUASI-PARTICLE TUNNELING IN YBA2CU3O7 CEO2/YBA2CU3O7 RAMP-TYPE JUNCTIONS/

We present results of quasiparticle tunnelling experiments on YBa2Cu3O 7/CeO2/YBa2Cu3O7 ramp-type junctions. To account for the influence of the V-shaped background conductance, that is seen in most junctions, a simple method is developed that is capable of describing the backgrou nd with hardly any deviation. After correction of the background prono unced maxima can be observed at about +/-25 mV. Although the peak posi tion does not change much with increasing temperature, an analysis usi ng the Dynes equation yields a decreasing gap value and an increasing broadening above 15-20 K.