THE EFFECT OF THE COMPACTION PRESSURE ON THE MICROWAVE SURFACE-RESISTANCE OF THE PB DOPED BSCCO SYSTEM

Citation
R. Torres et al., THE EFFECT OF THE COMPACTION PRESSURE ON THE MICROWAVE SURFACE-RESISTANCE OF THE PB DOPED BSCCO SYSTEM, Physica. C, Superconductivity, 235, 1994, pp. 1995-1996
Citations number
2
Categorie Soggetti
Physics, Applied
ISSN journal
09214534
Volume
235
Year of publication
1994
Part
3
Pages
1995 - 1996
Database
ISI
SICI code
0921-4534(1994)235:<1995:TEOTCP>2.0.ZU;2-D
Abstract
Microwave surface resistance is analyzed in Bi-based sample supercondu ctors prepared under different compaction pressures (250 to 1500 MPa). The measurement is performed with the help of a new automatic measuri ng system based on a resonant cavity. It was found that the best resul ts are obtained for samples initially sintered at low compaction press ure, then crushed and resintered for a short time at larger pressure.