MECHANISM OF SILICON IMPLANT-DEPOSITION FOR SURFACE MODIFICATION OF STAINLESS-STEEL-304 USING KRF-EXCIMER LASER

Simultaneous implantation and deposition of Si by KrF-excimer-laser (2 48 nm) irradiation in an ambient silane (SiH4) gas realize the surface modification of stainless steel (SUS) 304 at room temperature. This p rocess is referred to as the Laser Implant-Deposition (LID). Depth pro files of Si concentration in the modified layers and the total quantit ies of supplied Si (Si dose) are analyzed by Rurtherford Backscatterin g Spectroscopy (RES) measurements. The Si supply mechanism of LID is d iscussed with variations of the Si dose as a function of laser fluence , gas pressure, and the number of laser pulses. The calculation of tem perature along the depth during the LID process suggests that the Si a toms diffuse into the SUS304 in a liquid phase. Fitting of the calcula ted depth profile to the experimental data, using the interdiffusion t heory, gives an interdiffusion coefficient between Si and SUS304 as hi gh as approximate to 2.8 x 10(-6) cm(2)/s. A simplified model for simu lation, by which well agreed depth profiles of Si can be simulated for various experimental conditions, is proposed.