POSITRON-TRAP CENTERS IN NEUTRON-IRRADIATED SILICON-CONTAINING HYDROGEN

Authors
MENG XT ZECCA A BRUSA RS
Citation
Xt. Meng et al., POSITRON-TRAP CENTERS IN NEUTRON-IRRADIATED SILICON-CONTAINING HYDROGEN, Applied physics A: Materials science & processing, 60(1), 1995, pp. 81-85
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
60
Issue
1
Year of publication
1995
Pages
81 - 85
Database
ISI
SICI code
0947-8396(1995)60:1<81:PCINSH>2.0.ZU;2-J
Abstract
The defect evolution as a function of the annealing temperature has be en studied in monocrystalline silicon grown in a hydrogen atmosphere a nd irradiated with 3.6 x 10(17) neutrons/cm(2). Positron lifetime spec troscopy has been used and the results compared with infrared absorpti on measurements. Vacancy-H, vacancy-2H, vacancy-O-H and divacancy comp lexes with m hydrogen atoms (m < 6) have been identified for the first time as possible positron traps.