The nature of the interface, the orientation relationship of beta-SiC
whisker (beta-SiCw)-Al combination, and the misfit dislocation structu
res at the beta-SiCw-Al interfaces in a beta-SiCw-Al composite have be
en observed by a high-resolution transmission electron microscopy (HRT
EM). It was shown that quite a good bonding between the whisker and th
e aluminium was achieved due largely to the lattice match between SiC
and aluminium at the interfaces. The orientation relationship between
the whisker and the aluminium was {002}(SiC)parallel to{111}(Al); [110
](SiC)parallel to[110](Al). The interface was clean, faceted and semic
oherent. The misfit dislocation cores were located in the whisker side
away from the beta-SiCw-Al interfaces.