EFFECT OF IN ADDITION ON SOME PHYSICAL-PROPERTIES OF THE AS2SE3 AMORPHOUS SYSTEM

Authors
ELOCKER MM ELFOULY MH FAYEK SA TALAAT H AMIN GAM
Citation
Mm. Elocker et al., EFFECT OF IN ADDITION ON SOME PHYSICAL-PROPERTIES OF THE AS2SE3 AMORPHOUS SYSTEM, Applied physics A: Materials science & processing, 60(2), 1995, pp. 233-238
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
60
Issue
2
Year of publication
1995
Pages
233 - 238
Database
ISI
SICI code
0947-8396(1995)60:2<233:EOIAOS>2.0.ZU;2-W
Abstract
The effect of In content on dc electrical conductivity and DTA of the system (As2Se3)(1-x) In-x, x=0, 0.01, 0.05, has been studied. The elec trical energy gap was found to increase for an In content 0.01% and de crease for an In content 0.05%. The samples exhibit the three conducti on mechanisms proposed by Mott and Davis. The activation energy was ca lculated for each mechanism. The effect of heating rate on the transit ion temperatures (T-g, T-c, T-m)was studied and the variation of the c rystallization-peak position was used to calculate the activation ener gy and the order of the crystallization process.