MAGNETIC-FIELD AND TEMPERATURE-DEPENDENT HALL-EFFECT IN UPD2AL3 EPITAXIAL-FILMS

Measurements of the magnetic-field and temperature-dependent Hall effe ct of thin epitaxial UPd2Al3 films with various defect densities were performed. In high-quality films the Hall coefficient R(H)(T) is posit ive and is dominated by skew scattering at elavated temperatures, pass es a maximum at 55 K and decreases with further decreasing temperature . At 6K to 7K a minimum occurs followed by a quadratic saturation beha viour for T --> 0. Positive and negative residual Hall coefficients R( H)(T = 0) were observed. As a function of the applied field (B less th an or equal to 12T) the Hall resistivity shows a nonlinear behaviour i n the whole temperature range that was investigated (2K to 35K).