ANISOTROPIC MIXED-STATE TRANSPORT IN BSCCO-2212 SINGLE-CRYSTAL

Resistive measurements are performed in the geometry of Bush et al. [1 ], in the whole range of angles phi between the applied field H less t han or equal to 8T and (ab)-plane of the crystal. It is found that at a certain temperature well below T-c the VB(phi) dependence changes dr amatically. Sharp rise of V-B, the voltage drop on the current-free si de, is observed in the narrow range of phi close to H parallel to (ab) . Pronounced fall of the rho(c)(T) occurring in the same range is expe rimentally observed thereby supporting the explanation based on the cu rrent redistribution caused by the interlayer coupling change.