Lc. Ku et al., THE ORIGIN OF THE HALF-INTEGRAL CONSTANT VOLTAGE STEPS IN HIGH-T-C GRAIN-BOUNDARY JUNCTION, Physica. C, Superconductivity, 243(1-2), 1995, pp. 187-190
Half-integral constant voltage steps have been observed recently on th
e I-V curve of the high-T-c grain-boundary junctions in the low-freque
ncy regime. Instead of the nonsinusoidal current phase relationship ac
ross the Josephson junction, we propose a phenomenological model that
can satisfactorily explain the appearance of half-integral constant vo
ltage steps. We regard the junction as being comprised of superconduct
ing microbridges separated by normal regions. Those normal regions and
current leakage might cause the junction to trap the magnetic flux an
d induce a circulating current. The results of numerical simulations,
based on the model mentioned above, are in agreement with the I-V char
acteristics of the RF biased grain-boundary junctions. Moreover, we ha
ve made a detailed comparison of the numerical and experimental data f
or the microwave power dependence of the half-integral steps.