FORMATION OF HAFNIUM CARBIDE THIN-FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM BIS(ETA-CYCLOPENTADIENYL)DIMETHYLHAFNIUM AS PRECURSOR

Thin films of hafnium carbide have been deposited by plasma-enhanced c hemical vapor deposition using bis(eta-cyclopentadienyl)dimethylhafniu m, Cp(2)Hf(CH3)(2), as precursor in 13.56 MHz planar reactor. The infl uence of the various experimental parameters on him properties has bee n studied. The carbon content ranged from 11 to 40 weight % and increa sed with the deposition rate. The film hardness varied between 1300 an d 2000 HK. Depending on the carbon content and power delivered in the discharge, the film resistivity and him density ranged from 271 to 10( 5) mu Omega . cm and from 3.4 to 10.4 g/cm(3), respectively, and the f ilm composition varied from HfC to hafnium containing a-C:H films.