ULTRAFAST EXCITON DYNAMICS IN SEMICONDUCTORS - EFFECTS OF DISORDER AND CONFINEMENT

Authors
HVAM JM LYSSENKO VG BIRKEDAL D ERLAND J
Citation
Jm. Hvam et al., ULTRAFAST EXCITON DYNAMICS IN SEMICONDUCTORS - EFFECTS OF DISORDER AND CONFINEMENT, Pure and applied chemistry, 67(3), 1995, pp. 401-408
Citations number
23
Categorie Soggetti
Chemistry
Journal title
Pure and applied chemistry → ACNP
ISSN journal
00334545
Volume
67
Issue
3
Year of publication
1995
Pages
401 - 408
Database
ISI
SICI code
0033-4545(1995)67:3<401:UEDIS->2.0.ZU;2-T
Abstract
The dynamics of excitonic transitions in semiconductors have been inve stigated by degenerate four-wave mixing experiments. We have studied t he coherence, interference and dephasing of free, bound and localized excitons in bulk semiconductors and of quasi-two-dimensional excitons in quantum well structures. The influence of inhomogeneous broadening is investigated and compared with quantum interference in a continuum of states. The nature of four-wave mixing beats in a system of bound e xcitons and biexcitons is discussed.