XEOL XANES OF ZNS(CU) AND POROUS SI

Using X-ray excited optical luminescence (XEOL), L- and K-edge photolu minescence yield (PLY) XANES of S and Si have been obtained on P31 (Zn S:Cu) and porous Si (PS), respectively. Both P31 and PS have a negativ e edge jump in PLY XANES at the L-edges. At S K-edge, for P31 the edge jump is positive. For PS both the positive and negative edge jumps ha ve been observed at Si K-edge, depending on the sample preparation and the optical channel used. The PLY XANES correlate well with the total electron yield spectra. The site selectivity of PLY XANES is discusse d.