TRACING THE CHANGING ENVIRONMENT OF LATTICE SITES IN THE RECRYSTALLIZATION OF AMORPHISED SILICON

Using RefleXAFS measurements at the Si K-edge changes in the environme nt of the lattice constituent in ion beam amorphised silicon at variou s stages of annealing have been recorded. The recrystallisation of the Si matrix was identified by the emergence of the second and third she ll of the diamond structure, which were fully established by 625 degre es C, consistent with RBS channeling results. Compared to this, earlie r results on dopants (As, Ga) in similar substrate material showed tha t recrystallisation around these sites was incomplete even at 900 degr ees C.