GLANCING ANGLE XAFS OF INAS INP AND GAAS/INP - STRAIN AND INTERFACE/

Authors
TURCHINI S PROIETTI MG MARTELLI F PROSPERI T GARCIA J
Citation
S. Turchini et al., GLANCING ANGLE XAFS OF INAS INP AND GAAS/INP - STRAIN AND INTERFACE/, Physica. B, Condensed matter, 209(1-4), 1995, pp. 557-558
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
209
Issue
1-4
Year of publication
1995
Pages
557 - 558
Database
ISI
SICI code
0921-4526(1995)209:1-4<557:GAXOII>2.0.ZU;2-1
Abstract
We report on XAFS at the As K-edge of GaAs/InP and InAs/InP strained s ingle heterostructures. The results show a conservation of the bond-le ngth in the strained layers with respect to the corresponding bulk mat erials. The measurements point out the formation of several In-As bond s at the GaAs/InP interface.