IN-SITU FT-IR STUDIES OF POROUS SILICON SURFACE-REACTIONS

Authors
DIETRICH R GROBE J FELD H
Citation
R. Dietrich et al., IN-SITU FT-IR STUDIES OF POROUS SILICON SURFACE-REACTIONS, Journal of molecular structure, 349, 1995, pp. 109-112
Citations number
4
Categorie Soggetti
Chemistry Physical
Journal title
Journal of molecular structure → ACNP
ISSN journal
00222860
Volume
349
Year of publication
1995
Pages
109 - 112
Database
ISI
SICI code
0022-2860(1995)349:<109:IFSOPS>2.0.ZU;2-J