LOW-DIMENSIONAL HOPPING CONDUCTION IN POROUS AMORPHOUS-SILICON

Authors
YAKIMOV AI STEPINA NP DVURECHENSKII AV SCHERBAKOVA LA
Citation
Ai. Yakimov et al., LOW-DIMENSIONAL HOPPING CONDUCTION IN POROUS AMORPHOUS-SILICON, Physica. B, Condensed matter, 205(3-4), 1995, pp. 298-304
Citations number
26
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
205
Issue
3-4
Year of publication
1995
Pages
298 - 304
Database
ISI
SICI code
0921-4526(1995)205:3-4<298:LHCIPA>2.0.ZU;2-N
Abstract
We report measurements of the temperature, bias voltage and magnetic f ield dependence of the hopping conductivity in amorphous silicon expos ed to anodic etching in aqueous HF solution (porous silicon). Our resu lts indicate that this system possesses the properties of a one-dimens ional system and a system with fractal dimension in different interval s of temperature.