The oxygen solubilities in undoped and Sb-doped Si melts have been inv
estigated after quenching. It was found that the oxygen solubility inc
reased with increasing Sb concentration in the Si melt, and the increa
sed oxygen concentration was proportional to the square of tile Sb con
centration in the Si melt. To explain the phenomenon we suggest that s
ome ordering of Sb2O existed in the Sb-doped Si melt. The equilibrium
constant for the reaction forming Sb2O in the Sb-doped Si melt was det
ermined to be 6300. It was calculated using the equilibrium constant t
hat the portion of the Sb2O in the Sb-doped Si melt increased with inc
rease in Sb concentration and/or oxygen concentration in the Si melt.