STRAIN-COMPENSATED MULTIQUANTUM BARRIERS FOR REDUCTION OF ELECTRON LEAKAGES IN LONG-WAVELENGTH SEMICONDUCTOR-LASERS

To suppress the leakage of hot electrons and thermionic electrons over the hetero-barrier of an active layer for long-wavelength lasers, we have proposed a two-cavity strain-compensated multi-quantum barrier, w hich utilizes alternate strain natures in wells and barriers to increa se the barrier height. The coupling of two strain-compensated superlat tices under the off-resonant condition increases the virtual electron barrier up to about 1.3 eV. It is not only sufficient to suppress the hot electrons, but it has the advantages of aluminium-free crystal gro wth and suppression of misfit dislocations by strain-compensation.