PROPERTIES OF THE CDSE-DOPED GLASS THIN-FILMS PREPARED BY ION-BEAM SPUTTERING METHOD

CdSe-doped silica glass thin films were prepared by the ion-beam sputt ering (IBS) method and the ion-assisted deposition method (IAD). Prope rties of the doped glass were studied by visible-ultraviolet absorptio n spectrometry and X-ray photoelectron spectroscopy. The particle size could be controlled by the deposition rate, the O-2 gas flow rate and the assist ion irradiation, but did not depend on the sputtering ion energy. The SiO2 matrix had the same structure as thermally oxidized S iO2 and the contents of Cd and Se atoms were several at.%. The Se atom s at the surface of a CdSe particle were replaced by O atoms as the O- 2 gas flow rate increased. The main effect of the assist ion irradiati on was resputtering and effects such as chemical activation were not d ominant. The CdSe particles increased in size during the annealing at 700 degrees C, but that at 500 degrees C scarcely affected the particl e size.