INFLUENCE OF FE CONTAMINATION IN CZOCHRALSKI-GROWN SILICON SINGLE-CRYSTALS ON LSI-YIELD RELATED CRYSTAL QUALITY CHARACTERISTICS

Influence of Fe contamination in CZ-grown silicon single crystal on ox idation-induced stacking fault (OSF) generation density, carrier recom bination and generation lifetimes, and gate oxide integrity (GOI) yiel d characteristics was experimentally investigated. Two Fe-doped silico n ingots were grown and tested. Concentration of Fe-B B([Fe-B]) in the se silicon ingots measured by deep level transient spectroscopy (DLTS) was about 5 x 10(11) cm(-3) and 5 x 10(12) cm(-3), respectively. OSF density generated by three-step annealing showed dependence on [Fe-B]. Carrier recombination lifetime (tau(r)) showed good correlation with [Fe-B], and a quantitative relationship was established. OSF density a fter one-step annealing, carrier generation lifetime (tau(g)) and GOI yield were not so dependent on [Fe-B].