SIO2 INP STRUCTURE PREPARED BY DIRECT PHOTOCHEMICAL VAPOR-DEPOSITION USING DEUTERIUM LAMP AND ITS APPLICATIONS TO METAL-OXIDE-SEMICONDUCTORFIELD-EFFECT TRANSISTOR/

Silicon dioxide (SiO2) films have been successfully deposited on indiu m phosphide (InP) substrate at low temperature and low pressure by dir ect photo-enhanced chemical vapor deposition (photo-CVD) under irradia tion by a deuterium lamp. Silane (SiH4) and oxygen (O-2) are used as r eactant sources. The measurements of Fourier transform infrared (FTIR) . Auger electron spectroscopy (AES) and X-ray photoelectron spectrosco py (XPS) show that the dominant components of the oxide are silicon an d oxygen and the film is SiO2. Metal-oxide-semiconductor (MOS) capacit ors show sharp interfaces with densities of states in the range of 1.2 x 10(11) cm(-2) eV(-1). N-channel depletion-mode InP metal-oxide-semi conductor fieid-effect transistors (MOSFETs) have been fabricated with a transconductance of 63 mS/mm for 2 mu m gate length and an effectiv e channel mobility as high as 1140 cm(-2) V-1 s(-1). High-frequency S- parameter measurements of microwave characteristics for the devices in dicate a current-gain cutoff frequency f(t) = 6.3 GHz.