EFFECT OF GALLIUM ADDITION ON DENSITY VARIATION OF MOLTEN SILICON

Density measurement of molten silicon added with gallium has been perf ormed in a temperature range from the melting point to 1650 degrees C by using an improved Archimedian method. No deviation from calculation was found with gallium introduction except when 25 at. % was added. P recise density measurement with 0.1 at. % Ga-doping near the melting t emperature shows no sign of the ''density anomaly'' observed for pure silicon.