DIRECT BONDING BETWEEN INP AND GD3GA5O12 FOR INTEGRATING SEMICONDUCTOR AND MAGNETOOPTIC DEVICES

The bonding oi InP/Gd3Ga5O12 and InP/GaInSb on Gd3Ga;O-12 without glue is demonstrated. After chemical treatment, heat treatment in H-2 ambi ent results in bonding of the samples. We have investigated the bondin g conditions, mechanisms and the bonding durability against device fab rication processes. The bonding durability depends on the crystal orie ntation of the wafer, the heat-treatment temperature and GaInSb layer thickness. The samples bonded at higher temperature maintained bonding after typical device fabrication processes, The (111)-oriented InP is more susceptible to bonding than the (100)-oriented InP. The heat-tre atment temperature is reduced by using appropriate chemical treatment and by applying pressure.